|The following is an unedited press release, shown as received from the company represented. We've elected to present selected releases without editorial comment, as a way to provide our readers more information without further overtaxing our limited editorial resources. To avoid any possible confusion or conflict of interest, the Imaging Resource will always clearly distinguish between company-provided press releases and our own editorial views and content.|
Powered by Coranto
PRESS RELEASE: SanDisk introduces two Gigabit NAND flash memory device
Enables 512 Megabytes In A 2-Die TSOP NAND Package For High Capacity Memory Cards and Embedded Storage
HANNOVER, GERMANY, MARCH 13, 2003 - SanDisk Corporation (NASDAQ:SNDK) today introduced a 2 gigabit (Gbit) single-die NAND flash memory device. In addition, two of the 2Gbit die will be packaged in a single TSOP (Thin Small Outline Package) to produce a 4Gbit (512 megabyte) NAND component. The 2 and 4Gbit products were announced at the CeBIT trade show where SanDisk is showing several new products in Hall 21, Booth B24.
The 2Gbit device, twice the capacity of SanDisk's largest NAND component offering, was developed jointly by Toshiba Corporation and SanDisk and incorporates SanDisk's patented multi-level cell (MLC) technology and the next generation 0.13 micron NAND flash technology. MLC allows two bits of data to be stored in each memory cell, effectively doubling memory capacity compared to traditional NAND flash. The technology will be used to build flash memory cards and as embedded memory in a growing number of electronic products that require higher capacity storage.
Bo Ericsson, vice president of OEM marketing at SanDisk, said, "The miniaturization of today's advanced new portable products, including mobile phones, PDA's, digital cameras, camcorders and MP3 players places even greater space constraints for product components such as flash memory. At the same time, these electronic products require ever increasing memory capacity. Our new 2Gbit NAND flash device offers product manufacturers what they are looking for - more flash memory in the smallest possible space. It also allows us to offer higher capacity points in our standard flash cards."
The 2Gbit NAND memory chip will be produced using the advanced 0.13 micron process technology at the Flash Vision Japan Joint Venture established by Toshiba Corporation and SanDisk and located in Yokkaichi, Japan.
SanDisk now offers several flash memory components ranging from 128 megabit to the new 2Gbit product. It is expected that the new 2Gbit device will start sampling this month. Sampling of the 4Gbit device is expected to start in April, 2003. OEM volume pricing on the 2 and 4Gbit devices will be $80 and $160 respectively. SanDisk also plans on introducing lower density derivative devices using this core technology throughout 2003.
SanDisk, the world's largest supplier of flash data storage products, designs, manufactures and markets industry-standard, solid-state data, digital imaging and audio storage products using its patented, high density flash memory and controller technology. SanDisk is based in Sunnyvale, CA.
The matters discussed in this news release contain forward looking statements that are subject to certain risks and uncertainties as described under the caption, "Factors That May Affect Future Results" in the company's annual report on Form 10-K-A and quarterly reports on Form 10-Q, filed with the Securities and Exchange Commission. The companies assume no obligation to update the information in this release.
SanDisk's web site/home page address: http://www.sandisk.com
All trade names are either registered trademarks or trademarks of their respective holders.
(First posted on Thursday, March 13, 2003 at 15:59 EST)