PRESS RELEASE: SanDisk Awarded Prestigious Honor for Flash Memory Innovation at 2010 International Solid State Circuits Conference
X4 Technology and Advanced Flash Memory Solutions Earn SanDisk Second Consecutive Lewis Winner Outstanding Paper Award
SAN FRANCISCO--(BUSINESS WIRE)--ISSCC CONFERENCE – SanDisk Corporation (NASDAQ:SNDK), the global leader in flash memory cards, today announced that it has received the ISSCC 2009 Lewis Winner Outstanding Paper Award at the 2010 IEEE International Solid-State Circuits Conference (ISSCC), held Feb. 8-12 at the San Francisco Marriot Hotel. The award was presented to Cuong Trinh, director, design engineering, SanDisk, who delivered a paper at last year’s conference entitled “A 5.6MB/s 64Gb 4b/Cell NAND Flash Memory in 43nm CMOS”, which detailed key advancements leading to the development of 4-bit-per-cell (X4) memory on 43 nanometer (nm) technology.
“On behalf of the team at SanDisk, I am honored to receive this prestigious award in recognition of our successful development of X4™ technology,” said Cuong Trinh, SanDisk. “Using our patented X4 controller technology’s memory management, signal processing schemes and exceptionally robust error correction code, we were able to achieve four-bits-per-cell with strong performance and low cost.”
“This exceptional paper describes how SanDisk has combined advanced algorithms with four-bit-per-cell technology to produce the world’s largest-capacity monolithic 64 Gigabit flash chip. The fact that SanDisk has received two consecutive ISSCC Outstanding-Paper Awards is a dramatic demonstration of their continuing breakthrough research,” said Dr. Kenneth C. Smith, ISSCC Awards/Recognition Chair.
SanDisk co-developed 4-bit-per-cell technology with its memory technology and manufacturing partner, Toshiba. X4 enables high manufacturing efficiency and lowest die cost, while meeting the reliability and performance requirements of industry standard cards that employ MLC NAND. Volume shipments of SanDisk® SDHC™ and Memory Stick PRO™ cards employing X4 technology began in September 2009.
Volume shipments of SanDisk SDHC™ cards employing X4 technology began in September 2009
Photo and caption provided by SanDisk Corp.
SanDisk Corporation is the global leader in flash memory cards, from research, manufacturing and product design to consumer branding and retail distribution. SanDisk’s product portfolio includes flash memory cards for mobile phones, digital cameras and camcorders; digital audio/video players; USB flash drives for consumers and the enterprise; embedded memory for mobile devices; and solid state drives for computers. SanDisk is a Silicon Valley-based S&P 500 company, with more than half its sales outside the United States.
SanDisk’s product and executive images can be downloaded from: http://www.sandisk.com/corporate/media.asp
SanDisk’s web site/home page address: http://www.sandisk.com
© 2010 SanDisk Corporation. All rights reserved. SanDisk and the SanDisk logo are trademarks of SanDisk Corporation, registered in the United States and other countries. X4 is a trademark of SanDisk Corporation. SDHC is a trademark of SD-3C LLC. Memory Stick PRO is a trademark of Sony Corporation. Other brand names mentioned herein are for identification purposes only and may be the trademarks of their respective holder(s).
This press release contains certain forward-looking statements, including specifications, applications, markets, and customers that are based on our current expectations and involve numerous risks and uncertainties that may cause these forward-looking statements to be inaccurate. Risks that may cause these forward-looking statements to be inaccurate include among others: our products may not perform as and the other risks detailed from time-to-time in our Securities and Exchange Commission filings and reports, including, but not limited to, our most recent annual report on Form 10-K/A and our subsequent quarterly reports on Form 10-Q. We do not intend to update the information contained in this press release.
(First posted on Wednesday, February 10, 2010 at 13:41 EST)